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OP162GS Datasheet(PDF) 3 Page - Analog Devices |
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OP162GS Datasheet(HTML) 3 Page - Analog Devices |
3 / 16 page OP162/OP262/OP462–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage VOS OP162G, OP262G, OP462G 50 325 mV H Grade, –40 ∞C £ TA £ +125∞C1 mV D Grade, –40 ∞C £ TA £ +125∞C 0.8 3 mV 5mV Input Bias Current IB 360 600 nA Input Offset Current IOS ±2.5 ±25 nA Input Voltage Range VCM 0+2 V Common-Mode Rejection CMRR 0 V £ VCM £ +2.0 V, –40 ∞C £ TA £ +125∞C70 110 dB Large Signal Voltage Gain AVO RL = 2 k W, 0.5 V £ VOUT £ 2.5 V 20 V/mV RL = 10 k W, 0.5 V £ VOUT £ 2.5 V 20 30 V/mV Long-Term Offset Voltage VOS G Grade 1 600 mV OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 250 mA 2.95 2.99 V IL = 5 mA 2.85 2.93 V Output Voltage Swing Low VOL IL = 250 mA14 50 mV IL = 5 mA 66 150 mV POWER SUPPLY Power Supply Rejection Ratio PSRR VS = +2.7 V to +7 V, –40 ∞C £ TA £ +125∞C60 110 dB Supply Current/Amplifier ISY OP162, VOUT = 1.5 V 600 700 mA –40 ∞C £ TA £ +125∞C1 mA OP262, OP462, VOUT = 1.5 V 500 650 mA –40 ∞C £ TA £ +125∞C 850 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 k W 10 V/ ms Settling Time tS To 0.1%, AV = –1, VO = 2 V Step 575 ns Gain Bandwidth Product GBP 15 MHz Phase Margin fm 59 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.5 mV p-p Voltage Noise Density en f = 1 kHz 9.5 nV/ ÷Hz Current Noise Density in f = 1 kHz 0.4 pA/ ÷Hz NOTES 1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 ∞C, with an LTPD of 1.3. Specifications subject to change without notice. OP162/OP262/OP462 REV. D –3– (@ VS = +3.0 V, VCM = 0 V, TA = +25 C, unless otherwise noted) |
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Similar Description - OP162GS |
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