OP250GS datasheet(2/16 Pages) AD

Part #	OP250GS

Description	CMOS Single-Supply Rail-to-Rail Input/Output Operational Amplifiers

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REV. 0

–2–

OP250/OP450–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Units

INPUT CHARACTERISTICS

Offset Voltage

VOS

8mV

–40

°C < T

A < +125

°C20

mV

Input Bias Current

IB

240

pA

–40

°C < T

A < +85

°C60

pA

–40

°C < T

A < +125

°C

500

pA

Input Offset Current

IOS

0.5

25

pA

–40

°C < T

A < +125

°C60

pA

Input Voltage Range

03

V

Common-Mode Rejection Ratio

CMRR

VCM = 0 V to 3 V

40

55

dB

–40

°C < T

A < +125

°C35

dB

Large Signal Voltage Gain

AVO

RL = 2 k

Ω , V

O = 0.3 V to 2.7 V

800

V/mV

Offset Voltage Drift

∆V

OS/∆T10

µV/°C

Bias Current Drift

∆I

B/

∆T

1.8

pA/

°C

Offset Current Drift

∆I

OS/

∆T

0.07

pA/

°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

IL = 100

µA

2.99

V

IL = 10 mA

2.85

2.94

V

–40

°C to +125°C

2.8

V

Output Voltage Low

VOL

IL = 100

µA1

mV

IL = 10 mA

55

100

mV

–40

°C to +125°C

125

mV

Output Current

IOUT

100

mA

Open Loop Impedance

ZOUT

f = 1 MHz, AV = 1

180

Ω

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 2.7 V to 6 V

60

80

dB

–40

°C < T

A < +125

°C55

dB

Supply Current/Amplifier

ISY

VO = 0 V

700

1,000

µA

–40

°C < T

A < +125

°C

1,250

µA

DYNAMIC PERFORMANCE

Slew Rate

SR

RL = 10 k

Ω

1.9

V/

µs

Settling Time

tS

To 0.01%

4

µs

Gain Bandwidth Product

GBP

0.95

MHz

Phase Margin

Øo

46

Degrees

Channel Separation

CS

f = 1 kHz, RL = 10 k

Ω

100

dB

NOISE PERFORMANCE

Voltage Noise

en p–p

0.1 Hz to 10 Hz

10

µV p–p

Voltage Noise Density

en

f = 1 kHz

45

nV/

√Hz

f = 10 kHz

30

nV/

√Hz

Current Noise Density

in

f = 1 kHz

0.05

pA/

√Hz

Specifications subject to change without notice.

(VS =

3.0 V, TA =

25 C, VCM = 1.5 V unless otherwise noted)

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