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DG406BP25 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DG406BP25 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 19 page DG406BP25 3/19 CHARACTERISTICS Conditions Peak reverse current On-state voltage V TM Peak off-state current Reverse gate cathode current 50 - Turn-on energy Gate trigger current Delay time Rise time Fall time Gate controlled turn-off time Turn-off energy Storage time Turn-off gate charge Total turn-off gate charge Peak reverse gate current - 3000 V RGM = 16V, No gate/cathode resistor µC I T = 1000A, VDM = 2500V Snubber Cap Cs = 1.0 µF, di GQ/dt = 30A/µs T j = 125 oC unless stated otherwise Symbol Parameter I DM I RRM V GT Gate trigger voltage I GT I RGM E ON t d t r E OFF t gs t gf t gq Q GQ Q GQT I GQM Min. Max. Units -2.5 V V DRM = 2500V, V RG = 0V - 50 mA At V RRM -50 mA V D = 24V, IT = 100A, Tj = 25 oC- 1.0 V V D = 24V, IT = 100A, Tj = 25 oC- 1.5 A mA mJ 1040 - V D = 2000V I T = 1000A, dIT/dt = 300A/µs I FG = 30A, rise time ≤ 1.0µs µs 1.5 - -3.0 µs - 2300 mJ - 14.0 µs µs 1.5 - µs 15.5 - - 6000 µC - 420 A At 1000A peak, I G(ON) = 4A d.c. |
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