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DIM400DDS12-A000 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # DIM400DDS12-A000
Description  Dual Switch IGBT Module
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM400DDS12-A000 Datasheet(HTML) 4 Page - Dynex Semiconductor

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DIM400DDS12-A000
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 400A
VGE = ±15V
VCE = 600V
RG(ON) = 3.3
RG(OFF) = 3.3
LS ~ 100nH
710
ns
tf
Fall time
70
ns
EOFF
Turn-off energy loss
60
mJ
td(on)
Turn-on delay time
190
ns
tr
Rise time
100
ns
EON
Turn-on energy loss
40
mJ
Qrr
Diode reverse recovery charge
IF = 400A
VCE = 600V
dIF/dt = 4700A/μs
55
μC
Irr
Diode reverse recovery current
300
A
Erec
Diode reverse recovery energy
17
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 400A
VGE = ±15V
VCE = 600V
RG(ON) = 3.3
RG(OFF) = 3.3
LS ~ 100nH
890
ns
tf
Fall time
100
ns
EOFF
Turn-off energy loss
60
mJ
td(on)
Turn-on delay time
440
ns
tr
Rise time
125
ns
EON
Turn-on energy loss
60
mJ
Qrr
Diode reverse recovery charge
IF = 400A
VCE = 600V
dIF/dt = 4000A/μs
85
μC
Irr
Diode reverse recovery current
320
A
Erec
Diode reverse recovery energy
32
mJ


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