1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

JFET Switching Transistors

N–Channel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDS

30

Vdc

Drain–Gate Voltage

VDG

30

Vdc

Gate–Source Voltage

VGS

30

Vdc

Forward Gate Current

IG(f)

50

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

(IG = 1.0 µAdc, VDS = 0)

V(BR)GSS

30

—

Vdc

Gate Reverse Current

(VGS = 15 Vdc, VDS = 0, TA = 25°C)

(VGS = 15 Vdc, VDS = 0, TA = 100°C)

IGSS

—

—

1.0

0.20

nAdc

µAdc

Gate–Source Cutoff Voltage

(VDS = 15 Vdc, ID = 10 nAdc)

MMBF4391LT1

MMBF4392LT1

MMBF4393LT1

VGS(off)

–4.0

–2.0

–0.5

–10

–5.0

–3.0

Vdc

Off–State Drain Current

(VDS = 15 Vdc, VGS = –12 Vdc)

(VDS = 15 Vdc, VGS = –12 Vdc, TA = 100°C)

ID(off)

—

—

1.0

1.0

nAdc

µAdc

1. FR– 5 = 1.0

 0.75  0.062 in.

Thermal Clad is a trademark of the Bergquist Company

Order this document

by MMBF4391LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMBF4391LT1

MMBF4392LT1

MMBF4393LT1

1

2

3

CASE 318 – 08, STYLE 10

SOT– 23 (TO – 236AB)

2 SOURCE

3

GATE

1 DRAIN