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STB120N4F6 Datasheet(PDF) 4 Page - STMicroelectronics |
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STB120N4F6 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STB120N4F6, STD120N4F6 4/18 Doc ID 17042 Rev 5 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown Voltage ID = 250 µA, VGS= 0 40 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 20 V VDS = 20 V,Tc = 125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A 3.5 4.0 m Ω Table 6. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS = 0 V - 3850 650 350 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 20 V, ID = 80 A VGS = 10 V (see Figure 14) - 65 20 16 - nC nC nC RG Intrinsic gate resistance f = 1 MHz open drain - 1.5 - Ω |
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