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DIM800DDS12-A000 Datasheet(PDF) 1 Page - Dynex Semiconductor |
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DIM800DDS12-A000 Datasheet(HTML) 1 Page - Dynex Semiconductor |
1 / 8 page DIM800DDS12-A000 Dual Switch IGBT Module Replaces DS5540-2.2 DS5540-3 November 2009 (LN26746) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 1/8 www.dynexsemi.com FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated Cu Base with Al2O3 Substrates Lead Free construction APPLICATIONS High Reliability Inverters Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM800DDS12-A000 is a dual switch 1200V, n- channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM800DDS12-A000 Note: When ordering, please use the complete part number KEY PARAMETERS VCES 1200V VCE(sat) * (typ) 2.2 V IC (max) 800A IC(PK) (max) 1600A * Measured at the power busbars, not the auxiliary terminals 4 x M8 screwing depth max 16 screwing depth max 8 6 x M4 6 x O7 7(C) 1(E) 3(C) 5(E) 5(E) 6(G) 10(E) 2(C) 4(E) 12(C) 11(G) 130 ± 0.5 114 ±0.1 57 ±0.25 57 ±0.25 16 ±0.2 18 ±0.2 44 ±0.2 57 ±0.2 53 ±0.2 40 ±0.2 29.2 ±0.5 55.2 ± 0.3 11.85 ±0.2 28 ±0.5 Fig. 1 Circuit configuration Outline type code: D (See Fig. 11 for further information) Fig. 2 Package |
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