1

MMBR4957LT1, T3

MOTOROLA RF DEVICE DATA

The RF Line

PNP Silicon

High-Frequency Transistor

. . . designed for high–gain, low–noise amplifier oscillator and mixer applica-

tions. Specifically packaged for thick and thin–film circuits using surface mount

components.

• High Gain — Gpe = 17 dB Typ @ f = 450 MHz

• Low Noise — NF = 3.0 dB Typ @ f = 450 MHz

• Available in tape and reel packaging options by adding suffix:

T1 suffix = 3,000 units per reel

T3 suffix = 10,000 units per reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

– 30

Vdc

Collector–Base Voltage

VCBO

– 30

Vdc

Emitter–Base Voltage

VEBO

– 3.0

Vdc

Collector Current — Continuous

IC

– 30

mAdc

Maximum Junction Temperature

TJmax

150

°C

Power Dissipation, Tcase = 75°C*

Derate linearly above Tcase = 75°C @

PD(max)

0.278

3.70

W

mW/

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Storage Temperature

Tstg

– 55 to +150

°C

Thermal Resistance Junction to Case*

R

θJC

270

°C/W

* Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

DEVICE MARKING

MMBR4957LT1, T3 = 7F

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)

V(BR)CEO

– 30

—

—

Vdc

Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0)

V(BR)CBO

– 30

—

—

Vdc

Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0)

V(BR)EBO

– 3.0

—

—

Vdc

Collector Cutoff Current (VCB = –10 Vdc, IC = 0)

ICBO

—

—

– 0.1

µAdc

ON CHARACTERISTICS

DC Current Gain (IC = – 2.0 mAdc, VCE = –10 Vdc)

hFE

20

—

150

—

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IE = – 2.0 mAdc, VCE = –10 Vdc, f = 100 MHz)

fT

—

1200

—

MHz

Collector–Base Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

—

0.8

pF

Common–Emitter Amplifier Power Gain

(VCE = –10 Vdc, IC = – 2.0 mAdc, f = 450 MHz)

Gpe

—

17

—

dB

Noise Figure (IC = – 2.0 mAdc, VCE = –10 Vdc, f = 450 MHz)

NF

—

3.0

—

dB

Order this document

by MMBR4957LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMBR4957LT1, T3

IC = – 30 mA

HIGH–FREQUENCY

TRANSISTOR

PNP SILICON

CASE 318–07, STYLE 6

SOT–23

LOW PROFILE

(TO–236AA/AB)

REV 6