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AMS34063P Datasheet(PDF) 2 Page - Advanced Monolithic Systems |
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AMS34063P Datasheet(HTML) 2 Page - Advanced Monolithic Systems |
2 / 7 page Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS34063 ABSOLUTE MAXIMUM RATINGS (Note 1) Power Supply Voltage, VCC 40V Driver Collector Voltage, VC(driver) 40V Comparator Input Voltage Range, VIR -0.3V to +40V Switch Current, ISW 1.5A Switch Collector Voltage, VC(switch) 40V Power Dissipation (Note 3) Switch Emitter Voltage, VE(switch) 40V Maximum Junction Temperature +125 °C Switch Collector to Emitter Voltage, VCE(switch) 40V Storage Temperature -65 °C to +150°C ELECTRICAL CHARACTERISTICS Electrical Characteristics at VCC = 5.0V, -40 °C ≤T A ≤+85°C, unless otherwise noted. PARAMETER CONDITIONS Min. AMS34063 Typ. Max. Units Oscillator Charging Current 5.0V ≤ V CC ≤ 40V, T A= 25 °C 20 35 50 µA Discharge Current 5.0V ≤ V CC ≤ 40V, T A= 25 °C 150 200 250 µA Voltage Swing TA= 25 °C 0.5 VP-P Discharge to Charge Current Ratio IPK(sense) = VCC, TA= 25 °C 6.0 _ Current Limit Sense Voltage ICHG = IDISCHG, TA= 25 °C 250 300 350 mV Output Switch (Note 2) Saturation Voltage, Darlington Connection ISW = 1.0A, VC(driver) = VC(switch) 1.0 1.3 V Saturation Voltage ISW = 1.0A, IC(driver) = 50mA, (Forced β ≈ 20) 0.45 0.7 V DC Current Gain ISW = 1.0A, VCE = 5.0V, TA= 25 °C 35 120 Collector Off-State Current VCE = 40V, TA= 25 °C 10 nA Comparator Threshold Voltage 1.18 1.25 1.32 V Threshold Voltage Line Regulation 3.0V ≤ V CC ≤ 40V 0.04 0.2 mV/V Input Bias Current VIN = 0V 40 400 nA Total Device Supply Current 5.0V ≤ V CC ≤ 40V, I PK(sense) = VCC , CT = 0.001 µF, V pin 5 > V th, Pin 2 = Gnd, Remaining pins open 2.4 3.5 mA Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. Note 2: To minimize power dissipation, low duty cycle pulse testing is used. Note 3: Power dissipation at TA = 25 °C is equal to 1.0W for the 8 lead P DIP package and 625mW for the SO-8 package. For operation at temperatures above TA = 25 °C derate the power dissipation at 10mW/°C. |
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