MRF947AT1 datasheet(3/17 Pages) MOTOROLA

Part #	MRF947AT1

Description	NPN Silicon Low Noise, High-Frequency Transistors

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Manufacturer	MOTOROLA [Motorola, Inc]

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MMBR941 MRF947 MRF9411 SERIES

MOTOROLA RF DEVICE DATA

PERFORMANCE CHARACTERISTICS

Conditions

Symbol

MRF9411LT1

MMBR941LT1, T3

MRF947 Series

Unit

Conditions

Symbol

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

Insertion Gain

(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)

(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)

|S21|2

—

16

10

—

14

8.0

—

14

10.8

—

dB

Maximum Unilateral Gain (1)

(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)

(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)

GUmax

—

18

12

—

16

10

—

14.8

11.6

—

dB

Noise Figure — Minimum (Figure 9)

(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)

(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)

NFMIN

—

1.5

2.1

—

1.5

2.1

—

1.5

2.1

—

dB

Associated Gain at Minimum NF (Figure 9)

(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)

(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)

GNF

—

15

9.5

—

14

8.5

—

14

10

—

dB

Noise Figure — 50 ohm Source

(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)

NF50

Ω

—

1.9

2.8

—

1.9

2.8

—

1.9

2.8

dB

NOTE:

1. Maximum Unilateral Gain is GUmax =

Figure 1. Collector–Base Capacitance

versus Voltage

Figure 2. DC Current Gain versus

Collector Current

Figure 3. Gain Bandwidth Product versus

Collector Current

Figure 4. Insertion Gain versus Collector Current

TYPICAL CHARACTERISTICS

MMBR941LT1, T3; MMBR941BLT1; MRF9411LT1; MRF9411BLT1

IC, COLLECTOR CURRENT (mA)

VCE = 6 V

f = 1 GHz

24

20

16

12

8

4

0

12

3

5

10

7

20

100

70

50

30

VCE = 6 V

f = 1 GHz

IC, COLLECTOR CURRENT (mA)

12

10

8

6

4

2

0

12

3

5

10

7

20

100

70

50

30

IC, COLLECTOR CURRENT (mA)

200

100

70

50

30

20

10

12

3

5

10

7

20

100

70

50

30

300

12

3

5

7

10

1

0.7

0.5

0.1

0.2

0.3

MRF9411LT1

VCB, REVERSE VOLTAGE (V)

MMBR941LT1, T3

f = 1 MHz

|S21|2

(1

– |S11|2)(1 – |S22|2)

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