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APT10M30AVR Datasheet(PDF) 4 Page - Advanced Power Technology

Part # APT10M30AVR
Description  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT10M30AVR Datasheet(HTML) 4 Page - Advanced Power Technology

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V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
5
10
50
100
.01
.1
1
10
50
0
50
100
150
200
250
300
0
0.4
0.8
1.2
1.6
2.0
APT10M30AVR
TC =+25°C
TJ =+150°C
SINGLE PULSE
400
100
50
10
5
1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY RDS (ON)
Crss
Coss
Ciss
100
µS
10mS
100mS
DC
1mS
TJ =+150°C
TJ =+25°C
Coss
Ciss
VDS=50V
VDS=20V
VDS=80V
I
D
= I
D
[Cont.]
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
15,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
TO-3 (TO-204AE) Package Outline
22.23 (.875) Max.
6.35 (.250)
9.15 (.360)
Drain
(Case)
Source
Dimensions in Millimeters and (Inches)
Seating
Plane
7.92 (.312)
12.70 (.500)
1.52 (.060)
3.43 (.135)
1.47 (.058)
1.60 (.063)
(2-Places)
16.64 (.655)
17.15 (.675)
29.90 (1.177)
30.40 (1.197)
38.61 (1.52)
39.12 (1.54)
25.15 (0.990)
26.67 (1.050)
10.67 (.420)
11.18 (.440)
5.21 (.205)
5.72 (.225)
3.84 (.151)
4.09 (.161)
(2-Places)
Gate


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