1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Preliminary Information

General Purpose Transistor

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–323/SC–70 package

which is designed for low power surface mount applications.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

–60

Vdc

Collector – Base Voltage

VCBO

–60

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

PD

150

mW

Thermal Resistance Junction to Ambient

RqJA

833

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

MMBT2907AWT1 = 2F

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(2)

(IC = –10 mAdc, IB = 0)

V(BR)CEO

–60

—

Vdc

Collector – Base Breakdown Voltage

(IC = –10 mAdc, IE = 0)

V(BR)CBO

–60

—

Vdc

Emitter – Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

V(BR)EBO

–5.0

—

Vdc

Base Cutoff Current

(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)

IBL

—

–50

nAdc

Collector Cutoff Current

(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)

ICEX

—

–50

nAdc

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMBT2907AWT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMBT2907AWT1

Motorola Preferred Device

1

2

3

CASE 419 – 02, STYLE 3

SOT– 323/SC – 70

COLLECTOR

3

1

BASE

2

EMITTER