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APT5010JVRU3 Datasheet(PDF) 5 Page - Advanced Power Technology

Part # APT5010JVRU3
Description  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT5010JVRU3 Datasheet(HTML) 5 Page - Advanced Power Technology

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2.0
1.0
0.5
0.1
0.05
0.01
0.005
MIN
TYP
MAX
50
65
50
80
155
155
410
7.5
15
100
300
5
5
400
200
UNIT
nS
Amps
nC
Volts
A/
µS
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt = -15A/
µS, V
R
= 30V, T
J
= 25
°C
Reverse Recovery Time
T
J
= 25
°C
I
F
= 30A, di
F
/dt = -240A/
µS, V
R
= 350V
T
J
= 100
°C
Forward Recovery Time
T
J
= 25
°C
I
F
= 30A, di
F
/dt = 240A/
µS, V
R
= 350V
T
J
= 100
°C
Reverse Recovery Current
T
J
= 25
°C
I
F
= 30A, di
F
/dt = -240A/
µS, V
R
= 350V
T
J
= 100
°C
Recovery Charge
T
J
= 25
°C
I
F
= 30A, di
F
/dt = -240A/
µS, V
R
= 350V
T
J
= 100
°C
Forward Recovery Voltage
T
J
= 25
°C
I
F
= 30A, di
F
/dt = 240A/
µS, V
R
= 350V
T
J
= 100
°C
Rate of Fall of Recovery Current
T
J
= 25
°C
I
F
= 30A, di
F
/dt = -240A /
µS, V
R
= 350V (See Figure 10)
T
J
= 100
°C
DYNAMIC CHARACTERISTICS
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Symbol
RθJC
RθJA
W
T
MIN
TYP
MAX
0.90
20
1.06
30
UNIT
°C/W
oz.
gm.
APT5010JVRU3
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


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