DYNAMIC CHARACTERISTICS

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

APT5010LVFR

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Reverse Recovery Time

Reverse Recovery Charge

Peak Recovery Current

Symbol

dt

UNIT

Amps

Volts

V/ns

ns

µC

Amps

Symbol

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

f = 1 MHz

MIN

TYP

MAX

7400

8900

1000

1400

380

570

312

470

50

75

127

190

14

30

16

32

54

80

510

UNIT

pF

nC

ns

MIN

TYP

MAX

47

188

1.3

5

250

500

1.6

5.5

15

27

temperature.

µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.24

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient