APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

* Source

Drain

Gate

*

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

* Source

Source terminals are shorted

internally. Current handling

capability is equal for either

Source terminal.

ADV

ANCE

TECHNICAL

INFORMA

TION

DYNAMIC CHARACTERISTICS

APT50M65JFLL

temperature.

APT Reserves the right to change, without notice, the specifications and information contained herein.

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Reverse Recovery Time

Reverse Recovery Charge

Peak Recovery Current

Symbol

dt

UNIT

Amps

Volts

V/ns

ns

µC

Amps

Symbol

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

f = 1 MHz

MIN

TYP

MAX

6940

1430

108

174

45

79

19

15

43

6

UNIT

pF

nC

ns

MIN

TYP

MAX

60

240

1.3

5

270

540

1.8

6.2

16

29

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.23

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient