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MMDF2C02HD Datasheet(PDF) 1 Page - Motorola, Inc |
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MMDF2C02HD Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 12 page 1 Motorola TMOS Power MOSFET Transistor Device Data Designer's™ Data Sheet Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS ™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Miniature SO–8 Surface Mount Package — Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • Avalanche Energy Specified • Mounting Information for SO–8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 20 Vdc Gate–to–Source Voltage VGS ± 20 Vdc Drain–to–Gate Voltage (RGS = 1.0 mΩ) VDGR 20 Vdc Drain Current — Continuous N–Channel P–Channel — Pulsed N–Channel P–Channel ID IDM 3.8 3.3 19 20 A Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Total Power Dissipation @ TA= 25°C (2) PD 2.0 Watts Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 20 V, VGS = 5.0 V, Peak IL = 9.0 A, L = 10 mH, RG = 25 Ω) N–Channel (VDD = 20 V, VGS = 5.0 V, Peak IL = 6.0 A, L = 18 mH, RG = 25 Ω) P–Channel EAS 405 324 mJ Thermal Resistance — Junction to Ambient (2) R θJA 62.5 °C/W Maximum Lead Temperature for Soldering, 0.0625 ″ from case. Time in Solder Bath is 10 seconds. TL 260 °C DEVICE MARKING D2C02 (1) Negative signs for P–Channel device omitted for clarity. (2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max. ORDERING INFORMATION Device Reel Size Tape Width Quantity MMDF2C02HDR2 13 ″ 12 mm embossed tape 2500 units Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Order this document by MMDF2C02HD/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1996 D S G P–Channel D S G N–Channel CASE 751–05, Style 14 SO–8 MMDF2C02HD COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM (N–CHANNEL) RDS(on) = 0.160 OHM (P–CHANNEL) Motorola Preferred Device ™ N–Source 1 2 3 4 8 7 6 5 Top View N–Gate P–Source P–Gate N–Drain N–Drain P–Drain P–Drain Preferred devices are Motorola recommended choices for future use and best overall value. REV 5 |
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