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ACT-S128K32V020F2I Datasheet(PDF) 3 Page - Aeroflex Circuit Technology |
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ACT-S128K32V020F2I Datasheet(HTML) 3 Page - Aeroflex Circuit Technology |
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3 / 7 page  Aeroflex Circuit Technology ACT-S128K32V SCD3359 REV B 12/17/98 Plainview NY (516) 694-6700 3 Standby Current ISB CE = VIH, OE = VIH, f = 5 MHz, VCC = Max, CMOS Compatible 80 60 60 mA Output Low Voltage VOL IOL = 8 mA, VCC = Min 0.4 0.4 0.4 V Output High Voltage VOH IOH = -4.0 mA, VCC = Min 2.4 2.4 2.4 V AC Characteristics (VCC = 3.3V, VSS = 0V, TC = -55°C to +125°C) Read Cycle Parameter Sym –017 Min Max –020 Min Max –025 Min Max –035 Min Max –045 Min Max –055 Min Max Units Read Cycle Time tRC 17 20 25 35 45 55 ns Address Access Time tAA 17 20 25 35 45 55 ns Chip Enable Access Time tACE 17 20 25 35 45 55 ns Output Hold from Address Change tOH 0 0 0 0 0 0 ns Output Enable to Output Valid tOE 9 12 15 20 25 30 ns Chip Enable to Output in Low Z * tCLZ 3 3 3 3 3 3 ns Output Enable to Output in Low Z * tOLZ 0 0 0 0 0 0 ns Chip Deselect to Output in High Z * tCHZ 12 12 12 15 20 20 ns Output Disable to Output in High Z * tOHZ 10 11 12 15 20 20 ns * Parameters guaranteed by design but not tested Write Cycle Parameter Sym –017 Min Max –020 Min Max –025 Min ax –035 Min Max –045 Min Max –055 Min Max Units Write Cycle Time tWC 17 20 25 35 45 55 ns Chip Enable to End of Write tCW 12 15 20 25 30 40 ns Address Valid to End of Write tAW 12 15 20 25 30 40 ns Data Valid to End of Write tDW 10 12 15 18 20 20 ns Write Pulse Width tWP 13 15 20 25 30 40 ns Address Setup Time tAS 0 0 0 0 0 0 ns Output Active from End of Write * tOW 3 3 3 4 4 4 ns Write to Output in High Z * tWHZ 10 10 10 15 15 15 ns Data Hold from Write Time tDH 0 0 0 0 0 0 ns Address Hold Time tAH 0 0 0 0 0 0 ns * Parameters guaranteed by design but not tested DC Characteristics (continued) (3.0Vdc< VCC < 3.6Vdc, VSS = 0V, TC = -55°C to +125°C, Unless otherwise specified) Parameter Sym Conditions –017 & –020 Min Max –025 & –035 Min Max –045 & –055 Min Max Units |
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