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ACT-F512K32N-060F5C Datasheet(PDF) 7 Page - Aeroflex Circuit Technology

Part # ACT-F512K32N-060F5C
Description  ACT-F512K32 High Speed 16 Megabit FLASH Multichip Module
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Manufacturer  AEROFLEX [Aeroflex Circuit Technology]
Direct Link  http://www.aeroflex.com
Logo AEROFLEX - Aeroflex Circuit Technology

ACT-F512K32N-060F5C Datasheet(HTML) 7 Page - Aeroflex Circuit Technology

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SCD1665 REV B 6/29/01 Plainview NY (516) 694-6700
7
timer is reset. Any command other than sector erase
within the time-out window will reset the device to the
read mode, ignoring the previous command string.
Loading the sector erase buffer may be done in any
sequence and with any number of sectors (1 to 8).
Sector erase does
not require the user to program the
device prior to erase.
The device automatically
programs all memory locations in the sector(s) to be
erased prior to electrical erase. When erasing a sector
or sectors the remaining unselected sectors are not
affected.
The system is
not required to provide any
controls or timings during these operations. Post Erase
data state is all "1"s.
The automatic sector erase begins after the 80µs time
out from the rising edge of the WE pulse for the last
sector erase command pulse and terminates when the
data on D7 is “1" at which time the device returns to
read mode.
During the execution of the Sector Erase
command, only the Erase Suspend and Erase Resume
commands are allowed. All other commands will reset
the device to read mode.
Data Polling must be
performed at an address within any of the sectors being
erased.
Data Protection
The ACT-F512K32 is designed to offer protection
against accidental erasure or programming caused by
spurious system level singles that may exist during
power transitions.
During power
up the device
automatically resets the internal state machine in the
read mode. Also, with its control register architecture,
alteration of the memory content only occurs after
successful
completion
of
specific
multi-bus
cycle
command sequences.
The device also incorporates several features to prevent
inadvertent write cycles resulting from Vcc power-up
and power-down transitions or system noise.
LOW Vcc WRITE INHIBIT
To avoid initiation of a write cycle during Vcc power-up
and power-down, a write cycle is locked out for VCC less
than 3.2V (typically 3.7V). If VCC <VLKO, the command
register is disabled and all internal program/erase
circuits are disabled. Under this condition the device will
reset to read mode. Subsequent writes will be ignored
until the Vcc level is greater than VLKO. It is the users
responsibility to ensure that the control pins are logically
correct to prevent unintentional writes when Vcc is
above 3.2V.
WRITE PULSE GLITCH PROTECTION
Noise pulses of less than 5ns (typical) on OE, CE or
WE will not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding anyone of OE = VIL, CE =
VIH or WE = VIH. To initiate a write cycle CE and WE
must be logical zero while OE is a logical one.
POWER-UP WRITE INHIBIT
Power-up of the device with WE = CE = VIL and OE =
VIH will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the
read mode on power-up.
Write Operation Status
D7
DATA POLLING
The ACT-F512K32 features Data Polling as a method to
indicate to the host that the internal algorithms are in
progress or completed. During the program algorithm,
an attempt to read the device will produce compliment
data of the data last written to D7. During the erase
algorithm, an attempt to read the device will produce a
"0" at the D7 Output. Upon completion of the erase
algorithm an attempt to read the device will produce a
"1" at the D7 Output.
For chip Erase, the Data Polling is valid after the rising
edge of the sixth WE pulse in the six write pulse
sequence. For sector erase, the Data Polling is valid
after the last rising edge of the sector erase WE pulse.
Data polling must be performed at a sector address
within any of the sectors being erased and not a
protected sector. Otherwise, the status may not be valid.
Once
the
algorithm
operation
is
close
to
being
completed, data pins (D7) change asynchronously while
the output enable (OE) is asserted low. This means that
the device is driving status information on D7 at one
instance of time and then that byte's valid data at the
next instant of time. Depending on when the system
samples the D7 Output, it may read the status or valid
data. Even if the device has completed internal
algorithm operation and D7 has a valid data, the data
outputs on D0 - D6 may be still invalid. The valid data on
D0 - D7 will be read on the successive read attempts.
The Data Polling feature is only active during the
programming algorithm, erase algorithm, or sector erase
time-out.
See Figures 6 and 10
D6
TOGGLE BIT
The ACT-F512K32 also features the "Toggle Bit" as a
method to indicate to the host system that algorithms
are in progress or completed.
During a program or erase algorithm cycle, successive
attempts to read data from the device will result in D6
toggling between one and zero. Once the program or
erase algorithm cycle is completed, D6 Will stop toggling
and valid data will be read on successive attempts.
During programming the Toggle Bit is valid after the
rising edge of the fourth WE pulse in the four write pulse
sequence. For chip erase the Toggle Bit is valid after the
rising edge of the sixth WE pulse in the six write pulse


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