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ACT-SF512K16N-39P3T Datasheet(PDF) 1 Page - Aeroflex Circuit Technology |
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ACT-SF512K16N-39P3T Datasheet(HTML) 1 Page - Aeroflex Circuit Technology |
1 / 11 page FEATURES eroflex Circuit Technology - Advanced Multichip Modules © SCD1663 REV A 4/28/98 CIRCUIT TECHNOLOGY www.aeroflex.com s 2 – 512K x 8 SRAMs & 2 – 512K x 8 Flash Die in One MCM s Access Times of 25ns (SRAM) and 60ns (Flash) or 35ns (SRAM) and 70 or 90ns (Flash) s 512K x 16 SRAM s 512K x 16 5V Flash s Organized as 512K x 16 of SRAM and 512K x 16 of Flash Memory with Separate Data Buses s Both Blocks of Memory are User Configurable as 1M x 8 s Low Power CMOS s Input and Output TTL Compatible Design s MIL-PRF-38534 Compliant MCMs Available s Decoupling Capacitors and Multiple Grounds for Low Noise s Industrial and Military Temperature Ranges s Industry Standard Pinouts s Packaging – Hermetic Ceramic q 66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder, Aeroflex code# "P3" q 66 Pin, 1.08" x 1.08" x .185" PGA Type, With Shoulder, Aeroflex code# "P7" q 68 Lead, .94" x .94" x .140" Single-Cavity Small Outline Gull Wing, Aeroflex code# "F18" (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint) s DESC SMD Pending – 5962-96901 FLASH MEMORY FEATURES s Sector Architecture (Each Die) q 8 Equal Sectors of 64K bytes each q Any combination of sectors can be erased with one command sequence. s +5V Programing, 5V ±10% Supply s Embedded Erase and Program Algorithms s Hardware and Software Write Protection s Internal Program Control Time. s 10,000 Erase / Program Cycles Pin Description FI/O0-15 Flash Data I/O SI/O0-15 SRAM Data I/O A0–18 Address Inputs FWE1-2 Flash Write Enables SWE1-2 SRAM Write Enables FCE1-2 Flash Chip Enables SCE1-2 SRAM Chip Enables OE Output Enable NC Not Connected VCC Power Supply GND Ground 512Kx8 FCE2 OE A0 – A18 SI/O0-7 SI/O8-15 FI/O0-7 FI/O8-15 8 8 8 8 FCE1 FWE2 FWE1 SWE2 SWE1 SCE1 SCE2 Block Diagram – PGA Type Packages (P3 & P7) & CQFP (F18) SRAM 512Kx8 SRAM 512Kx8 Flash 512Kx8 Flash 512Kx16 SRAM/FLASH Multichip Module ACT–SF512K16 High Speed Note: Programming information available upon request |
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