ACT-S512K8N-055F3T datasheet(3/8 Pages) AEROFLEX

Part #	ACT-S512K8N-055F3T

Description	ACT-S512K8 High Speed 4 Megabit Monolithic SRAM

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Manufacturer	AEROFLEX [Aeroflex Circuit Technology]

Direct Link	http://www.aeroflex.com

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Aeroflex Circuit Technology

SCD1664 REV C 5/10/00

Plainview NY (516) 694-6700

3

AC Characteristics

(VCC = 5.0V, VSS= 0V, Tc= -55°C to +125°C)

Read Cycle

Parameter

Sym

–017

Min Max

–020

Min Max

–025

Min Max

–035

Min Max

–045

Min Max

–055

Min Max

Units

Read Cycle Time

tRC

17

-

20

-

25

-

35

-

45

-

55

-

ns

Address Access Time

tAA

-

17

-

20

-

25

-

35

-

45

-

55

ns

Chip Select Access Time

tACS

-

17

-

20

-

25

-

35

-

45

-

55

ns

Output Hold from Address Change

tOH

0

-

0

-

0

-

0

-

0

-

0

-

ns

Output Enable to Output Valid

tOE

-

9

-

10

-

12

-

25

ns

Chip Select to Output in Low Z (1)

tCLZ

2

-

2

-

2

-

4

-

4

-

4

-

ns

Output Enable to Output in Low Z (1)

tOLZ

0

-

0

-

0

-

0

-

0

-

0

-

ns

Chip Deselect to Output in High Z (1)

tCHZ

-

9

-

10

-

12

-

15

-

20

-

20

ns

Output Disable to Output in High Z (1)

tOHZ

-

9

-

10

-

12

-

15

-

20

-

20

ns

Note 1. Guaranteed by design, but not tested

Write Cycle

Parameter

Sym

–017

Min Max

–020

Min Max

–025

Min Max

–035

Min Max

–045

Min Max

–055

Min Max

Units

Write Cycle Time

tWC

17

-

20

-

25

-

35

-

45

-

55

-

ns

Chip Select to End of Write

tCW

15

-

15

-

20

-

25

-

35

-

50

-

ns

Address Valid to End of Write

tAW

15

-

15

-

20

-

25

-

35

-

50

-

ns

Data Valid to End of Write

tDW

12

-

12

-

15

-

20

-

25

-

25

-

ns

Write Pulse Width

tWP

14

-

14

-

15

-

25

-

35

-

40

-

ns

Address Setup Time

tAS

2

-

2

-

2

-

2

-

2

-

2

-

ns

Address Hold Time

tAH

0

-

0

-

0

-

0

-

5

-

5

-

ns

Output Active from End of Write (1)

tOW

0

-

0

-

0

5

-

5

-

ns

Write to Output in High Z (1)

tWHZ

-

9

-

9

-

10

-

15

-

20

-

25

ns

Data Hold from Write Time

tDH

0

-

0

-

0

-

0

-

0

-

0

-

ns

Note 1. Guaranteed by design, but not tested

Data Retention Electrical Characteristics (Special Order Only)

(Tc = -55°C to +125°C)

Parameter

Sym

Test Conditions

ALL SPEEDS

Min

Typ

Max

Units

VCC for Data Retention

VDR

CE

≥ V

CC – 0.2V

2

-

5.5

V

Data Retention Current (1) ICCDR1

VCC = 3V

-

0.5

7.0

mA

Available in Low Power version. Call For Information.

Truth Table

Mode

CE

OE

WE

Data I/O

Power

Standby

H

X

High Z

Standby (deselect/power down)

Read

L

H

Data Out

Active

Output Disable

L

H

High Z

Active (deselected)

Write

L

X

L

Data In

Active

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