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ACT-F512K8N-070F7Q Datasheet(PDF) 5 Page - Aeroflex Circuit Technology |
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ACT-F512K8N-070F7Q Datasheet(HTML) 5 Page - Aeroflex Circuit Technology |
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5 / 21 page  Aeroflex Circuit Technology SCD1668 REV A 4/28/98 Plainview NY (516) 694-6700 5 Device Operation The ACT–F512K8 Monolithic is composed of One, Four megabit flash device. Programming of the ACT–F512K8 is accomplished by executing the program command sequence. The program algorithm, which is an internal algorithm, automatically times the program pulse widths and verifies proper cell status. Sectors can be pro- gramed and verified in less than 1 second. Erase is accomplished by executing the erase command sequence. The erase algorithm, which is internal, auto- matically preprograms the array if it is not already pro- gramed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell status. The entire mem- ory is typically erased and verified in 1.5 seconds (if pre-programmed). The sector mode allows for 64K byte blocks of memory to be erased and reprogrammed with- out affecting other blocks. Bus Operation READ The ACT–F512K8 has two control functions, both of which must be logically active, to obtain data at the out- puts. Chip Enable (CE) is the power control and should be used for device selection. Output-Enable (OE) is the output control and should be used to gate data to the output pins of the chip selected. Figure 7 illustrates AC read timing waveforms. OUTPUT DISABLE With Output-Enable at a logic high level (VIH), output from the device is disabled. Output pins are placed in a high impedance state. STANDBY MODE The ACT-F512K8 standby mode consumes less than 6.5 mA. In the standby mode the outputs are in a high impedance state, independent of the OE input. If the device is deselected during erasure or programming, the device will draw active current until the operation is com- pleted. WRITE Device erasure and programming are accomplished via the command register. The contents of the register serve as input to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does not occupy an addres- sable memory location. The register is a latch used to store the command, along with address and data infor- mation needed to execute the command. The command register is written by bringing WE to a logic low level (VIL), while CE is low and OE is at VIH. Addresses are latched on the falling edge of WE or CE, whichever hap- pens later. Data is latched on the rising edge of the WE or CE whichever occurs first. Standard microprocessor write timings are used. Refer to AC Program Character- istics and Waveforms, Figures 3, 8 and 13. Command Definitions Device operations are selected by writing specific address and data sequences into the command register. Table 3 defines these register command sequences. READ/RESET COMMAND The read or reset operation is initiated by writing the read/reset command sequence into the command regis- ter. Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the command register contents are altered. The device will automatically power-up in the read/reset state. In this case, a command sequence is not required to read data. Standard microprocessor read cycles will retrieve array data. The device will automatically power-up in the read/reset state. In this case, a com- mand sequence is not required to read data. Standard Microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Figure 7 for the specific timing parameters. BYTE PROGRAMING The device is programmed on a byte-byte basis. Pro- gramming is a four bus cycle operation. There are two "unlock" write cycles. These are followed by the program Table 1 – Bus Operations Operation CE OE WE A0 A1 A9 I/O READ L L H A0 A1 A9 DOUT STANDBY H X X X X X HIGH Z OUTPUT DISABLE L H H X X X HIGH Z WRITE L H L A0 A1 A9 DIN ENABLE SECTOR PROTECT L VID L X X VID X VERIFY SECTOR PROTECT L L H L H VID Code Table 2 – Sector Addresses Table A16 A15 A14 Address Range SA0 0 0 0 00000h – 03FFFh SA1 0 0 1 04000h – 07FFFh SA2 0 1 0 08000h – 0BFFFh SA3 0 1 1 0C000h – 0FFFFh SA4 1 0 0 10000h – 13FFFh SA5 1 0 1 14000h – 17FFFh SA6 1 1 0 18000h – 1BFFFh SA7 1 1 1 1C000h – 1FFFFh |
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