LM5111

www.ti.com

SNVS300F – JULY 2004 – REVISED MAY 2011

Electrical Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Units

3.5

14

V

2.3

2.9

3.5

V

230

mV

Hysteresis

IN_A = IN_B = 0V (5111-1)

1

2

1

2

mA

1

2

CONTROL INPUTS

Logic High

2.2

V

Logic Low

0.8

V

High Threshold

1.3

1.75

2.2

V

Low Threshold

0.8

1.35

2.0

V

HYS

Input Hysteresis

400

mV

Input Current Low

−1

0.1

1

10

18

25

−1

0.1

1

µA

Input Current High

10

18

25

-1

0.1

1

OUTPUT DRIVERS

Output Resistance High

(1)

30

50

Ω

Output Resistance Low

(1)

1.4

2.5

Ω

Peak Source Current

3

A

200 ns Pulsed Current

Peak Sink Current

5

A

200 ns Pulsed Current

SWITCHING CHARACTERISTICS

td1

Propagation Delay Time Low to

25

40

ns

High, IN rising (IN to OUT)

See Figure 2 and Figure 3

td2

Propagation Delay Time High to

25

40

ns

Low, IN falling (IN to OUT)

See Figure 2 and Figure 3

Rise Time

14

25

ns

See Figure 2 and Figure 3

Fall Time

12

25

ns

See Figure 2 and Figure 3

LATCHUP PROTECTION

AEC - Q100, Method 004

500

mA

THERMAL RESISTANCE

Junction to Ambient,

SOIC Package

170

°C/W

0 LFPM Air Flow

VSSOP Package

60

SOIC Package

70

Junction to Case

°C/W

VSSOP Package

4.7

(1)

The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and

Bipolar devices.

Copyright © 2004–2011, Texas Instruments Incorporated

Submit Documentation Feedback

3

Product Folder Links: LM5111