MMFT1N10E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250 µA)

V(BR)DSS

100

—

—

Vdc

Zero Gate Voltage Drain Current, (VDS = 100 V, VGS = 0)

IDSS

—

—

10

µAdc

Gate–Body Leakage Current, (VGS = 20 V, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS

Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)

VGS(th)

2

—

4.5

Vdc

Static Drain–to–Source On–Resistance, (VGS = 10 V, ID = 0.5 A)

RDS(on)

—

—

0.25

Ohms

Drain–to–Source On–Voltage, (VGS = 10 V, ID = 1 A)

VDS(on)

—

—

0.33

Vdc

Forward Transconductance, (VDS = 10 V, ID = 0.5 A)

gFS

—

2.2

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 20 V,

VGS = 0,

f = 1 MHz)

Ciss

—

410

—

pF

Output Capacitance

(VDS = 20 V,

VGS = 0,

f = 1 MHz)

Coss

—

145

—

pF

Reverse Transfer Capacitance

f = 1 MHz)

Crss

—

55

—

SWITCHING CHARACTERISTICS

Turn–On Delay Time

(VDD = 25 V, ID = 0.5 A

VGS = 10 V, RG = 50 ohms,

RGS = 25 ohms)

td(on)

—

15

—

ns

Rise Time

(VDD = 25 V, ID = 0.5 A

VGS = 10 V, RG = 50 ohms,

RGS = 25 ohms)

tr

—

15

—

ns

Turn–Off Delay Time

VGS = 10 V, RG = 50 ohms,

RGS = 25 ohms)

td(off)

—

30

—

ns

Fall Time

GS = 25 ohms)

tf

—

32

—

Total Gate Charge

(VDS = 80 V, ID = 1 A,

VGS = 10 Vdc)

See Figures 15 and 16

Qg

—

7

—

nC

Gate–Source Charge

(VDS = 80 V, ID = 1 A,

VGS = 10 Vdc)

See Figures 15 and 16

Qgs

—

1.3

—

nC

Gate–Drain Charge

See Figures 15 and 16

Qgd

—

3.2

—

SOURCE DRAIN DIODE CHARACTERISTICS(1)

Forward On–Voltage

IS = 1 A, VGS = 0

VSD

—

0.8

—

Vdc

Forward Turn–On Time

IS = 1 A, VGS = 0,

dlS/dt = 400 A/µs,

VR = 50 V

ton

Limited by stray inductance

Reverse Recovery Time

dlS/dt = 400 A/µs,

VR = 50 V

trr

—

90

—

ns

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%