IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 88N30P IXTK 88N30P

IXTQ 88N30P IXTT 88N30P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

45

60

S

C

iss

6300

pF

C

oss

V

950

pF

C

rss

190

pF

t

d(on)

25

ns

t

r

V

24

ns

t

d(off)

R

96

ns

t

f

25

ns

Q

g(on)

180

nC

Q

gs

V

44

nC

Q

gd

90

nC

R

thJC

0.21

° C/W

R

thCS

TO-247 and TO-3P

0.21

° C/W

R

thCS

TO-264

0.15

° C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

88

A

I

SM

Repetitive

220

A

V

SD

I

1.5

V

Pulse test, t

≤300 µs, duty cycle d≤ 2 %

t

rr

I

250

ns

Q

RM

V

3.3

µC

Characteristic Curves

Fig. 2. Extended Output Characteristics

@ 25

0

20

40

60

80

100

120

140

160

180

200

02

46

8

10

12

14

16

18

20

9V

7V

6V

8V

5V

Fig. 1. Output Characteristics

@ 25

0

10

20

30

40

50

60

70

80

90

00.511.5

22.533.5

4

9V

8V

7V

6V

5V

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6771478 B2