2N5088

2N5089

MMBT5088

MMBT5089

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose

amplifier applications at collector currents from 1

µA to 50 mA.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

2N5088

2N5089

30

25

V

V

Collector-Base Voltage

2N5088

2N5089

35

30

V

V

Emitter-Base Voltage

4.5

V

Collector Current - Continuous

100

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5088

2N5089

*MMBT5088

*MMBT5089

Total Device Dissipation

Derate above 25

°C

625

5.0

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

357

°C/W

C

B

E

TO-92

C

B

E

SOT-23

Mark: 1Q / 1R

 2001 Fairchild Semiconductor Corporation

2N5088/2N5089/MMBT5088/MMBT5089, Rev A