©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

2N5551- MMBT5551 Rev. B

tm

April 2006

2N5551- MMBT5551

NPN General Purpose Amplifier

Features

• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.

• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

* Device mounted on FR-4 PCB 1.6"

× 1.6" × 0.06."

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

160

V

Collector-Base Voltage

180

V

Emitter-Base Voltage

6.0

V

Collector current - Continuous

600

mA

Junction and Storage Temperature

-55 ~ +150

°C

Symbol

Parameter

Max

Units

2N5551

*MMBT5551

Total Device Dissipation

Derate above 25

°C

625

5.0

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

357

°C/W

1. Base 2. Emitter 3. Collector

SOT-23

1

2

3

Marking: 3S

2N5551

MMBT5551

TO-92