Discrete POWER & Signal

Technologies

NPN RF Transistor

2N5770

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

15

V

Collector-Base Voltage

30

V

Emitter-Base Voltage

4.5

V

Collector Current - Continuous

50

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Characteristic

Max

Units

2N5770

Total Device Dissipation

Derate above 25

°C

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Case

125

°C/W

Thermal Resistance, Junction to Ambient

357

°C/W

C

B

E

TO-92

This device is designed for use as RF amplifiers, oscillators and

multipliers with collector currents in the 1.0 mA to 30 mA range.

Sourced from Process 43. See PN918 for characteristics.

© 1997 Fairchild Semiconductor Corporation