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AOD4C60 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOD4C60 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOD4C60 600V,4A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700 IDM 27A RDS(ON),max < 0.95 Ω Qg,typ 14nC Eoss @ 400V 2.7 µC 100% UIS Tested! 100% Rg Tested! Symbol VDS VGS IDM IAR EAR EAS MOSFET dv/dt ruggedness Peak diode recovery dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC Maximum Case-to-sink A Maximum Junction-to-Case D,F °C/W °C/W 0.7 0.5 1 Derate above 25 oC 125 1 8.5 Single pulsed avalanche energy H 326 PD dv/dt 100 600 Avalanche Current C 36 Repetitive avalanche energy C Pulsed Drain Current C Continuous Drain Current B The AOD4C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Drain-Source Voltage V ±30 Gate-Source Voltage TC=100°C A ID TC=25°C 4 3.5 27 Typical W W/ oC Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 °C Junction and Storage Temperature Range -50 to 150 °C Power Dissipation B Maximum Junction-to-Ambient A,G TC=25°C - 55 Maximum Thermal Characteristics Units °C/W 45 Parameter V/ns 20 mJ A mJ G D S G S D G S D Top View TO252 DPAK Bottom View AOD4C60 Rev.1.0 April 2013 www.aosmd.com Page 1 of 6 |
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