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PMEG3050BEP Datasheet(PDF) 9 Page - NXP Semiconductors |
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PMEG3050BEP Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 13 page PMEG3050BEP_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 28 October 2009 9 of 13 NXP Semiconductors PMEG3050BEP 5 A low VF MEGA Schottky barrier rectifier 8. Test information The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are calculated according to the equations: with IM defined as peak current, at DC, and with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline Fig 13. Duty cycle definition t1 t2 P t 006aaa812 duty cycle δ = t1 t2 I FAV () I M δ × = I RMS I FAV () = I RMS I M δ × = Fig 14. Package outline SOD128 07-09-12 Dimensions in mm 1.1 0.9 0.22 0.10 0.6 0.3 5.0 4.4 4.0 3.6 1.9 1.6 2.7 2.3 1 2 |
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