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AP73T03AGM-HF Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

Part # AP73T03AGM-HF
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP73T03AGM-HF Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

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AP73T03AGM-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4
0
2
4
6
02
46
8
10
Q G , Total Gate Charge (nC)
I D =12A
V DS =15 V
0
200
400
600
800
1000
1200
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Operation in this area
limited by RDS(ON)
0
20
40
60
80
02
46
V GS , Gate-to-Source Voltage (V)
T j =150
o C
T j =25
o C
V DS =5V
T j =-40
o C
0
2
4
6
8
10
12
14
25
50
75
100
125
150
T A , Ambient Temperature (
o C )


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