Features

• Low On-State Resistance

• Fast Switching

• Low Gate Charge & Low C

RSS

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charger and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

Mechanical Information

• Case: TO-252 / TO-251 Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

Marking & Ordering Information

TYPE

MARKING

PACKAGE

PACKING

HY4N65D

4N65D

TO-252

2500PCS/REEL

HY4N65M

4N65M

TO-251

80PCS/TUBE

Absolute Maximum Ratings (T

Units

V

V

A

A

W

mJ

℃

Thermal Characteristics

Units

℃/W

℃/W

COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE

HY4N65D

HY4N65M

Drain-Source Voltage

650

650V / 4A

N-Channel Enhancement Mode MOSFET

Parameter

Symbol

Gate-Source Voltage

4

4

Continuous Drain Current

+30

Pulsed Drain Current

1)

16

16

56.8

0.46

48

0.39

Maximum Power Dissipation

Derating Factor

Avalanche Energy with Single Pulse

Operating Junction and Storage Temperature Range

-55 to +150

180

Parameter

Symbol

HY4N65D

HY4N65M

Junction-to-Case Thermal Resistance

Note : 1. Maximum DC current limited by the package

Junction-to-Case Thermal Resistance

HY4N65D / HY4N65M

2.2

2.6

50

110

FIG. 1

– FORWARD CURRENT DERATING CURVE

AMBIENT TEMPERATURE (℃)

25

50

75

100

125

150

175

SINGLE PHASE HALF WAVE 60Hz

FIG. 2

– MAXIMUM NON-

1

2

5

10

SINGLE

1

4

10

20

100

T

0

0.2 0.4 0.6

0.0

REV 1.0, 20-Sept-2012

PAGE.1

Drain

1

Source

2

Gate

2

D

3

1

G

3

S

2

D

1

G

3

S

TO-252

TO-251