HY4N70T datasheet(2/4 Pages) HY

Part #	HY4N70T

Description	700V / 4A N-Channel Enhancement Mode MOSFET

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Manufacturer	HY [HY ELECTRONIC CORP.]

Direct Link	http://www.hygroup.com.tw

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2 / 4 page

Symbol

Min.

Typ.

Max.

Units

BVDSS

700

-

V

VGS(th)

2.0

-

4.0

V

RDS(ON)

-

2.5

2.8

W

IDSS

-

10

uA

IGSS

-

+100

nA

Qg

-

14.8

18.4

Qgs

-

2.8

-

Qgd

-

3.6

-

td(on)

-

14.8

18

tr

-

36.8

46

td(off)

-

21.8

28

tf

-

18.2

26

Ciss

-

500

-

Coss

-

65

-

Crss

-

2.5

-

IS

-

4.0

A

ISM

-

16.0

A

VSD

-

1.4

V

trr

-

220

-

ns

Qrr

-

1.3

-

uC

NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%

Reverse Recovery Time

VGS=0V、IS=4A

di/dt=100A/us

Reverse Recovery Charge

Max. Diode Forwad Voltage

-

Max. Pulsed Source Current

-

Diode Forward Voltage

IS=4A、VGS=0V

Input Capacitance

VDS=25V，VGS=0V

f=1.0MHZ

pF

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

Turn-On Delay Time

VDD=350V，ID=2A

VGS=10V，RG=25W

ns

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Gate Body Leakage Current

VGS=+30V、VDS=0V

Dynamic

Total Gate Charge

VDS=560V，ID=2A

VGS=10V

nC

Gate-Source Charge

Gate-Drain Charge

Gate Threshold Voltage

VDS=VGS、ID=250uA

Drain-Source On-State Resistance

VGS=10V、ID=2A

Zero Gate Voltage Drain Current

VDS=700V、VGS=0V

HY4N70T / HY4N70FT

Electrical Characteristics ( TC=25℃, Unless otherwise noted )

Paramter

Test Condition

Static

Drain-Source Breakdown Voltage

VGS=0V、ID=250uA

PAGE.2

REV 1.0, 24-Sept-2012

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