XTR110

2

SBOS141C

www.ti.com

PIN CONFIGURATION

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

Source Resistor

Common

V

V

V

Zero Adjust

Zero Adjust

Span Adjust

+V

CC

V

Gate Drive

Source Sense

V

V

4mA Span

16mA Span

TOP VIEW

See text regarding safe negative input voltage range.

Storage Temperature Range: A, B ................................ –55

°C to +125°C

K, U .................................. –40

°C to +85°C

Output Short-Circuit Duration, Gate Drive

Output Current Using Internal 50

Ω Resistor ................................... 40mA

NOTE: (1) Stresses above these ratings may cause permanent damage.

Exposure to absolute maximum conditions for extended periods may degrade

device reliability.

ELECTROSTATIC

DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas Instruments

recommends that all integrated circuits be handled with appropriate

precautions. Failure to observe proper handling and installation proce-

dures can cause damage.

ESD damage can range from subtle performance degradation to

complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could

cause the device not to meet its published specifications.

PACKAGE

TEMPERATURE

PRODUCT

PACKAGE-LEAD

DESIGNATOR

RANGE

XTR110AG

DIP-16 Ceramic

JD

–40

°C to +85°C

XTR110BG

DIP-16 Ceramic

JD

–40

°C to +85°C

XTR110KP

DIP-16 Plastic

N

0

°C to +70°C

XTR110KU

SOL-16 Surface-Mount

DW

0

°C to +70°C

NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.