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FT2000KD Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # FT2000KD
Description  Superfast Silicon Rectifiers - Single Diode / Two Polarities
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

FT2000KD Datasheet(HTML) 1 Page - Diotec Semiconductor

  FT2000KD Datasheet HTML 1Page - Diotec Semiconductor FT2000KD Datasheet HTML 2Page - Diotec Semiconductor  
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FT2000AA ... FT2000KG
FT2000AA ... FT2000KG
Superfast Silicon Rectifiers – Single Diode / Two Polarities
Superschnelle Silizium-Gleichrichter – Einzeldiode / Zwei Polaritäten
Version 2013-05-07
Dimensions - Maße [mm]
Nominal current
Nennstrom
20 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...400 V
Plastic case
Kunststoffgehäuse
TO-220AC
Weight approx.
Gewicht ca.
1.8 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type / Typ
Polarity / Polarität
Repet. peak reverse voltage
Period. Spitzensperrspanng.
VRRM [V]
Surge peak reverse volt.
Stoßspitzensperrspanng.
VRSM [V]
Forward voltage
Durchlass-Spannung
VF [V] 1)
K
(Standard)
A
(Reverse)
IF = 5 A
IF = 20 A
FT2000KA
FT2000AA
50
50
< 0.84
< 0.96
FT2000KB
FT2000AB
100
100
< 0.84
< 0.96
FT2000KC
FT2000AC
150
150
< 0.84
< 0.96
FT2000KD
FT2000AD
200
200
< 0.84
< 0.96
FT2000KG
FT2000AG
400
400
< 0.84
< 0.96
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
20 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
70 A 2)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
350/385 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
612 A2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
Tj
-50...+150°C
+200°C
Storage temperature – Lagerungstemperatur
TS
-50...+175°C
1
Tj = 25°C
2
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
4
3
1
4
3
1
A
K
4
3
1
Type
Typ
5.08±0.1
0.8
±0.2
1.3
±0.1
10.1
±0.3
Ø
±0.2
3.8
1.2±0.2
0.42
±0.1
4.5
±0.2
2.67±0.2


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