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FT2000KD Datasheet(PDF) 1 Page - Diotec Semiconductor |
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FT2000KD Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page FT2000AA ... FT2000KG FT2000AA ... FT2000KG Superfast Silicon Rectifiers – Single Diode / Two Polarities Superschnelle Silizium-Gleichrichter – Einzeldiode / Zwei Polaritäten Version 2013-05-07 Dimensions - Maße [mm] Nominal current Nennstrom 20 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...400 V Plastic case Kunststoffgehäuse TO-220AC Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type / Typ Polarity / Polarität Repet. peak reverse voltage Period. Spitzensperrspanng. VRRM [V] Surge peak reverse volt. Stoßspitzensperrspanng. VRSM [V] Forward voltage Durchlass-Spannung VF [V] 1) K (Standard) A (Reverse) IF = 5 A IF = 20 A FT2000KA FT2000AA 50 50 < 0.84 < 0.96 FT2000KB FT2000AB 100 100 < 0.84 < 0.96 FT2000KC FT2000AC 150 150 < 0.84 < 0.96 FT2000KD FT2000AD 200 200 < 0.84 < 0.96 FT2000KG FT2000AG 400 400 < 0.84 < 0.96 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 20 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 70 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 350/385 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 612 A2s Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj Tj -50...+150°C +200°C Storage temperature – Lagerungstemperatur TS -50...+175°C 1 Tj = 25°C 2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 4 3 1 4 3 1 A K 4 3 1 Type Typ 5.08±0.1 0.8 ±0.2 1.3 ±0.1 10.1 ±0.3 Ø ±0.2 3.8 1.2±0.2 0.42 ±0.1 4.5 ±0.2 2.67±0.2 |
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