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P2000BTL Datasheet(PDF) 1 Page - Diotec Semiconductor |
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P2000BTL Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page P2000ATL ... P2000MTL P2000ATL ... P2000MTL Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-24 Dimensions - Maße [mm] Nominal current Nennstrom 20 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...1000 V Plastic case Kunststoffgehäuse Ø 8 x 7.5 [mm] Weight approx. Gewicht ca. 2.0 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage/Surge peak reverse voltage Periodische Spitzensperrspannung/ Stoßspitzensperrspannung VRRM [V]/VRSM [V] DC reverse voltage Sperr-Gleichspannung VDC[V] P2000ATL 50 40 P2000BTL 100 80 P2000DTL 200 160 P2000GTL 400 320 P2000JTL 600 480 P2000KTL 800 640 P2000MTL 1000 800 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TA = 50°C IFAV 20 A 1) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 100 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 500/550 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 1250 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+175°C -50...+175°C 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 1 http://www.diotec.com/ © Diotec Semiconductor AG Ø 1.6±0.05 Ø 8 ±0.1 |
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