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2SC5658-R Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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2SC5658-R Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page  CREAT BY ART Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Low Cob Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Complements the 2SA2029 1. BASE Case : SOT-723 small outline plastic package 2. EMITTER per MIL-STD-202, Method 208 guaranteed 3. COLLECTOR High temperature soldering guaranteed: 260℃/10s 2SC5658-Q SOT-723 8K / 7" Reel RM Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Symbol Units VCBO V VCEO V VEBO V IC mA PC mW TJ OC TSTG OC Characteristics at TA=25℃ Symbol Units V(BR)CBO V V(BR)CEO V V(BR)EBO V ICBO uA IEBO uA hFE VCE(sat) V Transition Frequency fT MHz Output Capacitance Cob pF Classification of hFE Rank Range Version：A13 Collector Emitter Saturation Voltage at IC=50mA, IB=5mA Emitter Base Breakdown Voltage at IE=50uA, IC=0 7- DC Current Transfer ratio 3.5 120 - 560 at VCE=6V, IC=1mA - at VEB=7V, IC=0 0.4 - Min. -- 0.1 - - Packing Packing code Packing code (Green) at VCE=12V, IC=2mA, f=100MHz at VCB=12V, f=1MHz Collector Emitter Voltage - - Collector Cutoff Current RMG Small Signal Product NPN Transistor Ordering Information (example) Part No. 60 Package Mechanical Data Collector Base Voltage Parameter Collector Dissipation 100 - 60 Collector Base Breakdown Voltage Emitter Cutoff Current 50 Typ. Max. - - Storage Temperature Range - 55 to + 150 Junction Temperature 150 at VCB=60V, IE=0 Collector Emitter Breakdown Voltage 180 0.1 - Emitter Base Voltage Collector Current 150 at IC=50uA, IE=0 Parameter - - 2SC5658-Q/R/S Features at IC=1mA, IB=0 50 - SOT-723 Marking BQ Limits 7 RS 120~270 180~390 270~560 Q |
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