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STP10NM60N Datasheet(PDF) 1 Page - STMicroelectronics |
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STP10NM60N Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 17 page November 2010 Doc ID 15764 Rev 5 1/17 17 STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. Figure 1. Internal schematic diagram Order codes VDSS @TJmax RDS(on) max. ID Pw STD10NM60N 650 V < 0.55 Ω 10 A 70 W STF10NM60N 25 W STP10NM60N 70 W STU10NM60N 1 2 3 TO-220 IPAK TO-220FP 1 2 3 3 2 1 DPAK 1 3 Table 1. Device summary Order codes Marking Package Packaging STD10NM60N 10NM60N DPAK Tape and reel STF10NM60N 10NM60N TO-220FP Tube STP10NM60N 10NM60N TO-220 Tube STU10NM60N 10NM60N IPAK Tube www.st.com |
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