Electronic Components Datasheet Search |
|
AUIRFS8409 Datasheet(PDF) 1 Page - International Rectifier |
|
AUIRFS8409 Datasheet(HTML) 1 Page - International Rectifier |
1 / 14 page HEXFET® Power MOSFET S D G Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Features l Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Applications l Electric Power Steering (EPS) l Battery Switch l Start/Stop Micro Hybrid l Heavy Loads l DC-DC Applications GD S Gate Drain Source D S G D2Pak AUIRFS8409 S D G D TO-262 AUIRFSL8409 TO-220AB AUIRFB8409 S D G D VDSS 40V RDS(on) (SMD) typ. 0.97m Ω max. 1.2m Ω ID (Silicon Limited) 409A c ID (Package Limited) 195A Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) e EAS (tested) Single Pulse Avalanche Energy Tested Value l IAR Avalanche CurrentÃd A EAR Repetitive Avalanche Energy d mJ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 760 mJ 1360 See Fig. 14, 15, 24a, 24b 375 10lbfx in (1.1Nx m) °C A 300 -55 to + 175 ± 20 2.5 Max. 409 289 1524 195 AUIRFB8409 AUIRFS8409 AUIRFSL8409 AUTOMOTIVE GRADE 1 www.irf.com © 2013 International Rectifier April 30, 2013 Base part number Package Type Orderable Part Number Form Quantity AUIRFB8409 TO-220 Tube 50 AUIRFB8409 AUIRFS8409 D2-Pak Tube 50 AUIRFS8409 AUIRFS8409 D2-Pak Tape and Reel Left 800 AUIRFS8409TRL AUIRFSL8409 TO-262 Tube 50 AUIRFSL8409 Standard Pack |
Similar Part No. - AUIRFS8409 |
|
Similar Description - AUIRFS8409 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |