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AUIRFS8409 Datasheet(PDF) 1 Page - International Rectifier

Part # AUIRFS8409
Description  AUTOMOTIVE GRADE
Download  14 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

AUIRFS8409 Datasheet(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other
applications.
Features
l
Advanced Process Technology
l
New Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Applications
l
Electric Power Steering (EPS)
l
Battery Switch
l
Start/Stop Micro Hybrid
l
Heavy Loads
l
DC-DC Applications
GD
S
Gate
Drain
Source
D
S
G
D2Pak
AUIRFS8409
S
D
G
D
TO-262
AUIRFSL8409
TO-220AB
AUIRFB8409
S
D
G
D
VDSS
40V
RDS(on) (SMD) typ. 0.97m
max.
1.2m
ID (Silicon Limited)
409A
c
ID (Package Limited)
195A
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
e
EAS (tested)
Single Pulse Avalanche Energy Tested Value
l
IAR
Avalanche CurrentÃd
A
EAR
Repetitive Avalanche Energy d
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
760
mJ
1360
See Fig. 14, 15, 24a, 24b
375
10lbfx in (1.1Nx m)
°C
A
300
-55 to + 175
± 20
2.5
Max.
409
™
289™
1524
195
AUIRFB8409
AUIRFS8409
AUIRFSL8409
AUTOMOTIVE GRADE
1
www.irf.com © 2013 International Rectifier
April 30, 2013
Base part number
Package Type
Orderable Part Number
Form
Quantity
AUIRFB8409
TO-220
Tube
50
AUIRFB8409
AUIRFS8409
D2-Pak
Tube
50
AUIRFS8409
AUIRFS8409
D2-Pak
Tape and Reel Left
800
AUIRFS8409TRL
AUIRFSL8409
TO-262
Tube
50
AUIRFSL8409
Standard Pack


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