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IRF5803TRPBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRF5803TRPBF
Description  HEXFETPower MOSFET
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF5803TRPBF Datasheet(HTML) 2 Page - International Rectifier

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IRF5803PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-40
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.03 –––
V/°C Reference to 25°C, ID = -1mA
––– –––
112
VGS = -10V, ID = -3.4
‚
––– –––
190
VGS = -4.5V, ID = -2.7A
‚
VGS(th)
Gate Threshold Voltage
-1.0 ––– -3.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
4.0
–––
–––
S
VDS = -10V, ID = -3.4A
––– –––
-10
VDS = -32V, VGS = 0V
––– –––
-25
VDS = -32V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -20V
Gate-to-Source Reverse Leakage
––– –––
100
VGS = 20V
Qg
Total Gate Charge
–––
25
37
ID = -3.4A
Qgs
Gate-to-Source Charge
–––
4.5
6.8
nC
VDS = -20V
Qgd
Gate-to-Drain ("Miller") Charge
–––
3.5
5.3
VGS = -10V
td(on)
Turn-On Delay Time
–––
43
–––
VDD = -20V
‚
tr
Rise Time
––– 550
–––
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
88
–––
RG = 6.0Ω
tf
Fall Time
–––
50
–––
VGS = -10V
Ciss
Input Capacitance
––– 1110 –––
VGS = 0V
Coss
Output Capacitance
–––
93
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
73
–––
ƒ = 100kHz
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.2
V
TJ = 25°C, IS = -2.0A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
27
40
ns
TJ = 25°C, IF = -2.0A
Qrr
Reverse Recovery Charge
–––
34
50
nC
di/dt = -100A/µs
‚
Source-Drain Ratings and Characteristics
A
-27
–––
–––
–––
-2.0
–––
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
m
Ω
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
ƒ Surface mounted on 1 in square Cu board


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