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DTE2312 Datasheet(PDF) 3 Page - DinTek Semiconductor Co,.Ltd |
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DTE2312 Datasheet(HTML) 3 Page - DinTek Semiconductor Co,.Ltd |
3 / 8 page 3 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 4 8 12 16 20 0 1234 5 VDS - Drain-to-Source Voltage (V) VGS =10thru 3 V VGS =2 V 0.01 0.02 0.03 0.04 04 8 12 16 20 ID - Drain Current (A) VGS =10 V VGS =4.5 V VGS =2.5 V 0 2 4 6 8 10 04 8 12 16 20 ID =9.9 A Qg - Total Gate Charge (nC) VDS =16 V VDS =10 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 0 300 600 900 1200 1500 04 8 12 16 20 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =4.5 V,ID = 9.4 A VGS =10 V,ID =9.9 A DTE2312 www.din-tek.jp |
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Similar Description - DTE2312_13 |
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