Electronic Components Datasheet Search |
|
DTE2312 Datasheet(PDF) 4 Page - DinTek Semiconductor Co,.Ltd |
|
DTE2312 Datasheet(HTML) 4 Page - DinTek Semiconductor Co,.Ltd |
4 / 8 page 4 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Soure-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C VSD -Source-to-Drain Voltage (V) TJ = 25 °C 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.010 0.016 0.022 0.028 0.034 0.040 0 5 10 15 20 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 9.9 A Time (s) 10 1000 0.1 0.01 0.001 100 1 0 5 10 15 20 25 30 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 10 ms 100 ms 1s 10 s DC Limited byRDS(on)* BVDSS Limited 1ms 100 µs DTE2312 www.din-tek.jp |
Similar Part No. - DTE2312_13 |
|
Similar Description - DTE2312_13 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |