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DTL19P10 Datasheet(PDF) 4 Page - DinTek Semiconductor Co,.Ltd |
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DTL19P10 Datasheet(HTML) 4 Page - DinTek Semiconductor Co,.Ltd |
4 / 8 page 4 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1 10 100 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 1.2 1.5 0.0 0.3 0.6 0.9 - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.2 0.4 0.6 0.8 1.0 01 23 45 6 7 8 910 VGS - Gate-to-Source Voltage (V) 25 °C 125 °C 0 30 50 10 20 Time (s) 40 10 1000 1 0.1 0.001 100 0.01 Safe Operating Area, Junction-to-Ambient 1 ms 10 ms 100 ms DC 1 s 10 s 100 1 0.01 10 0.1 0.1 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified TA = 25 °C Single Pulse Limited by RDS(on)* 1 10 100 www.din-tek.jp DTL19P10 |
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