Electronic Components Datasheet Search |
|
DTM4830 Datasheet(PDF) 1 Page - DinTek Semiconductor Co,.Ltd |
|
DTM4830 Datasheet(HTML) 1 Page - DinTek Semiconductor Co,.Ltd |
1 / 8 page Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 48 62.5 74 90 RθJL 32 40 A Repetitive avalanche energy L=0.1mH C 12.8 mJ Avalanche Current C 16 Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C Junction and Storage Temperature Range -55 to 150 °C Thermal Characteristics t ≤ 10s °C/W Parameter RθJA Units Maximum Junction-to-Ambient A V V ±30 Gate-Source Voltage Drain-Source Voltage 80 Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted A ID 3.5 2.9 18 Power Dissipation B PD W 2 TA=25°C 1.3 TA=70°C Maximum Junction-to-Lead Steady-State °C/W Steady-State °C/W Maximum Junction-to-Ambient A D G2 D2 S2 G1 D1 S1 PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a Qg (Typ.) 80 0.075 at VGS = 10 V 3.5 7.3 nC SO-8 5 6 7 8 Top View 2 3 4 1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Conversion - Notebook System Power N-Channel 80 V (D-S) MOSFET S1 G1 S2 G2 D1 D1 D2 D2 www.din-tek.jp DTM4830 |
Similar Part No. - DTM4830 |
|
Similar Description - DTM4830 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |