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NGTG30N60FLWG Datasheet(PDF) 2 Page - ON Semiconductor |
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NGTG30N60FLWG Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 9 page  NGTG30N60FLWG http://onsemi.com 2 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT RqJC 0.75 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V Collector−emitter saturation voltage VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 150°C VCEsat 1.4 − 1.65 2.0 1.9 − V Gate−emitter threshold voltage VGE = VCE, IC = 200 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA DYNAMIC CHARACTERISTIC Input capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Cies − 4200 − pF Output capacitance Coes − 130 − Reverse transfer capacitance Cres − 110 − Gate charge total VCE = 480 V, IC = 30 A, VGE = 15 V Qg − 170 − nC Gate to emitter charge Qge − 34 − Gate to collector charge Qgc − 83 − SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time TJ = 25°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15 V td(on) − 83 − ns Rise time tr − 31 − Turn−off delay time td(off) − 170 − Fall time tf − 80 − Turn−on switching loss Eon − 0.7 − mJ Turn−off switching loss Eoff − 0.28 − Total switching loss Ets − 0.98 − Turn−on delay time TJ = 150°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15 V td(on) − 81 − ns Rise time tr − 32 − Turn−off delay time td(off) − 180 − Fall time tf − 110 − Turn−on switching loss Eon − 0.82 − mJ Turn−off switching loss Eoff − 0.63 − Total switching loss Ets − 1.45 − |
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