NGTG50N60FLWG datasheet(4/9 Pages) ONSEMI

Part #	NGTG50N60FLWG

Description	Insulated Gate Bipolar Transistor (IGBT)

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Manufacturer	ONSEMI [ON Semiconductor]

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NGTG50N60FLWG

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4

TYPICAL CHARACTERISTICS

20

0

QG, GATE CHARGE (nC)

Figure 7. Typical Gate Charge

50

100

150

200

250

300

350

15

10

5

0

VCE = 480 V

1.6

0

TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Switching Loss vs. Temperature

20

40

60

100

120

140

160

1.4

1.2

1

0.8

0.6

0.4

0.2

0

80

Eon

Eoff

VCE = 400 V

VGE = 15 V

IC = 50 A

Rg = 10 W

VCE = 400 V

VGE = 15 V

IC = 50 A

Rg = 10 W

1000

0

TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Switching Time vs. Temperature

20

40

60

100

120

140

160

80

100

10

1

td(off)

td(on)

tf

tr

4.5

8

IC, COLLECTOR CURRENT (A)

Figure 10. Switching Loss vs. IC

20

32

44

68

80

92

104

56

4

3.5

3

2.5

2

1.5

1

0.5

0

VCE = 400 V

VGE = 15 V

TJ = 150°C

Rg = 10 W

Eon

Eoff

8

2032

44

6880

92

104

56

1000

IC, COLLECTOR CURRENT (A)

Figure 11. Switching Time vs. IC

100

10

1

td(off)

td(on)

tf

tr

VCE = 400 V

VGE = 15 V

TJ = 150°C

Rg = 10 W

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NGTG50N60FLWG Datasheet(PDF) 4 Page - ON Semiconductor

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