NTMFS5834NL datasheet(1/6 Pages) ONSEMI

Part #	NTMFS5834NL

Description	Power MOSFET 40 V, 75 A, 9.3 m, Single N.Channel

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Manufacturer	ONSEMI [ON Semiconductor]

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February, 2013 − Rev. 3

1

Publication Order Number:

NTMFS5834NL/D

NTMFS5834NL,

NVMFS5834NL

Power MOSFET

40 V, 75 A, 9.3 mW, Single N−Channel

Features

• Low RDS(on)

• Low Capacitance

• Optimized Gate Charge

• NVMFS Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

40

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1)

Steady

State

TA = 25°C

ID

14

A

TA = 100°C

12

Power Dissipation

RqJA (Note 1)

TA = 25°C

PD

3.6

W

TA = 100°C

2.5

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

ID

75

A

TC = 100°C

63

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

107

W

TC = 100°C

75

Pulsed Drain

Current

tp = 10 ms

IDM

276

A

Operating Junction and Storage

Temperature

TJ, TSTG

−55 to

+175

°C

Source Current (Body Diode)

IS

75

A

Single Pulse Drain−to−Source Avalanche

Energy (L = 0.1 mH)

EAS

48

mJ

IAS

31

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Bottom) (Note 1)

RqJC

1.4

°C/W

Junction−to−Case (Top) (Note 1)

RqJC

4.5

Junction−to−Ambient Steady State

(Note 1)

RqJA

41

Junction−to−Ambient Steady State

(Note 2)

RqJA

75

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

1

V(BR)DSS

RDS(ON) MAX

ID MAX

40 V

9.3 mW @ 10 V

75 A

13.6 mW @ 4.5 V

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,6)

Device

Package

Shipping†

ORDERING INFORMATION

NTMFS5834NLT1G

DFN5

(Pb−Free)

1500/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

5834L

AYWZZ

S

G

D

NVMFS5834NLT1G

DFN5

(Pb−Free)

1500/Tape & Reel

NVMFS5834NLT3G

DFN5

(Pb−Free)

5000/Tape & Reel

Similar Part No. - NTMFS5834NL

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTMFS5834NL	114Kb / 6P	40 V, 75 A, 9.3 m, Single N?묬hannel June, 2012 ??Rev. 2
ON Semiconductor	NTMFS5834NLT1G	114Kb / 6P	40 V, 75 A, 9.3 m, Single N?묬hannel June, 2012 ??Rev. 2

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