NVMFD5852NLWFT1G datasheet(4/6 Pages) ONSEMI

Part #	NVMFD5852NLWFT1G

Description	Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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NVMFD5852NL, NVMFD5852NLWF

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TYPICAL CHARACTERISTICS

Qgs

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

40

20

30

10

0

500

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

0.90

0.85

0.80

0.75

0.65

0.60

0

25

50

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

10

1

0.1

1

10

VGS = 0 V

TJ = 25°C

Ciss

Coss

Crss

QT

VDS = 32 V

ID = 20 A

VGS = 4.5 V

td(on)

tr

tf

TJ = 25°C

VGS = 0 V

VGS = 10 V

Single Pulse

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

100 ms

10 ms

1 ms

dc

1500

1000

1.05

0

2

010

15

20

30

35

TJ = 25°C

VDS = 32 V

ID = 20 A

100

10 ms

25

5

2000

2500

6

8

10

4

Qgd

td(off)

40

1000

0.70

75

100

0.95 1.00

Similar Part No. - NVMFD5852NLWFT1G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NVMFD5852NLWFT1G	84Kb / 6P	Power MOSFET September, 2014 ??Rev. 6

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