DTU70N03 datasheet(2/8 Pages) DINTEK

Part #	DTU70N03

Description	N-Channel 30-V (D-S) MOSFET Halogen-free

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Manufacturer	DINTEK [DinTek Semiconductor Co,.Ltd]

Direct Link	http://www.daysemi.jp/

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2

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VDS = 0 V, ID = 250 µA

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

12.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 250

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 125 °C

50

VDS = 30 V, VGS = 0 V, TJ = 150 °C

250

On-State Drain Currenta

ID(on)

VDS ≥ 10 V, VGS = 10 V

50

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 22 A

0.0030

0.005

Ω

VGS = 4.5 V, ID = 20 A

0.0046

0.0063

Forward Transconductancea

gfs

VDS = 15 V, ID = 20 A

110

S

Dynamicb

Input Capacitance

Ciss

VGS = 0 V, VDS = 15 V, f = 1 MHz

3535

pF

Output Capacitance

Coss

680

Reverse Transfer Capacitance

Crss

400

Total Gate Chargec

Qg

VDS = 15 V, VGS = 10 V, ID = 20 A

67

100

nC

Gate-Source Chargec

Qgs

10.5

Gate-Drain Chargec

Qgd

12.2

Gate Resistance

Rg

f = 1 MHz

0.3

1.4

2.8

Ω

Turn-On Delay Timec

td(on)

VDD = 15 V, RL = 1.5 Ω

ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω

11

20

ns

Rise Timec

tr

10

20

Turn-Off Delay Timec

td(off)

35

53

Fall Timec

tf

10

20

Drain-Source Body Diode Ratings and Characteristics TC = 25 °C

b

Continuous Current

IS

70

A

Pulsed Current

ISM

120

Forward Voltagea

VSD

IF = 10 A, VGS = 0 V

0.83

1.5

V

Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs

41

62

ns

Peak Reverse Recovery Current

IRM(REC)

23

A

Reverse Recovery Charge

Qrr

40

60

nC

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