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IRFD9010 Datasheet(PDF) 5 Page - Vishay Siliconix |
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IRFD9010 Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 7 page Document Number: 91405 www.vishay.com S10-0998-Rev. A, 26-Apr-10 5 IRFD9010, SiHFD9010 Vishay Siliconix Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit 1000 100 10 1 0.1 100 0.1 0.01 0.001 0.0001 0.00001 t1, Rectangular Pulse Duration (s) 110 0.2 0.1 0.5 0.02 0.01 0.05 Single Pulse (Thermal Response) Notes: 1. Duty Factor, D = t 1/t2 2. Peak T J = PDM x TthJC + TC P DM t 1 t 2 R g IAS 0.01 W tp D.U.T L V DS + - V DD - 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp Q GS Q GD Q G VG Charge - 10 V D.U.T. - 3 mA V GS V DS I G I D 0.3 µF 0.2 µF 50 k Ω 12 V Current regulator Current sampling resistors Same type as D.U.T. |
Similar Part No. - IRFD9010 |
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Similar Description - IRFD9010 |
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