ACE8212B datasheet(3/9 Pages) ACE

Part #	ACE8212B

Description	Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE8212B

Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD

VER 1.2

3

Electrical Characteristics

TA=25℃, unless otherwise noted.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=250 uA

20

V

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

0.5

0.72

1

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

10

uA

Zero Gate Voltage Drain

Current

IDSS

VDS=20V, VGS=0V

1

uA

Maximum Body-Diode

Continuous Current

IS

2.4

A

Drain-Source On-Resistance

(TSSOP-8)

RDS(ON)

VGS=10V, ID=8A

8.2

13

m

Ω

VGS=4.5V, ID=5A

9.2

14

VGS=2.5V, ID=4A

12

19

VGS=1.8V, ID=3A

18

27

Drain-Source On-Resistance

(DFN2*5)

RDS(ON)

VGS=10V, ID=8A

10

13

m

Ω

VGS=4.5V, ID=7A

11

16

VGS=2.5V, ID=6A

14

22

VGS=1.8V, ID=4.5A

21

35

Forward Transconductance

gfs

VDS=10V,ID=8A

30

S

Diode Forward Voltage

VSD

ISD=1A, VGS=0V

0.72

1.0

V

Switching

Total Gate Charge

Qg

VDS=10V, VGS=4.5V, ID=8A

4.65

6.05

nC

Gate-Source Charge

Qgs

1.12

1.46

Gate-Drain Charge

Qgd

3.72

4.84

Turn-On Time

td(on)

VGS=10V, RL=10Ω, VDS=10V,

RGEN=3Ω

487.6

975.2

ns

tr

800.4

1600.8

Turn-Off Time

td(off)

1728

3456

tf

6180

12360

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=10V, f=1MHz

36.45

pF

Output Capacitance

Coss

183.88

REVERSE Transfer

Capacitance

Crss

14.57

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ACE8212B Datasheet(PDF) 3 Page - ACE Technology Co., LTD.

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